| PART |
Description |
Maker |
| SST27SF512-90-3C-NHE SST27SF010-90-3C-PHE |
64K X 8 FLASH 12V PROM, 90 ns, PQCC32
128K X 8 FLASH 12V PROM, 90 ns, PDIP28
|
SILICON STORAGE TECHNOLOGY INC
|
| CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
| M28F256-12C313 M28F256-12C113 M28F256-12C114 M28F2 |
32K X 8 FLASH 12V PROM, 120 ns, PQCC32 0.450 X 0.550 INCH, PLASTIC, LCC-32
32K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
ST Microelectronics
STMICROELECTRONICS
|
| CAT28F010GI-12TE13 CAT28F010T14I-90TE13 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON SEMICONDUCTOR
|
| M25P05-AVMN6TP M25P05-AVDW6TP M25P05-AVDW6P M25P05 |
64K X 8 FLASH 2.7V PROM, PDSO8 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
64K X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, TSSOP-8
|
ST Microelectronics
STMICROELECTRONICS
|
| M28V161-100N1R M28V161-150M1R M28V161-150N1R M28V1 |
2M X 8 FLASH 12V PROM, 100 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 150 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
2M X 8 FLASH 12V PROM, 150 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 120 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 100 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
2M X 8 FLASH 12V PROM, 120 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
|
ST Microelectronics
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M28F201-70K6 M28F201-90N3TR |
256K X 8 FLASH 12V PROM, 70 ns, PQCC32
256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
STMICROELECTRONICS
|
| M28V841-100N3RTR M28V841-150N3R M28V841-120N3RTR M |
1M X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
|
ST Microelectronics
|
|
